Effects of amorphous Si capping layer on sputtered BaSi2 film properties

Tian, Yilei; Montes, A.R.; Isabella, Olindo; Zeman, M.

doi:10.1109/ASDAM.2018.8544670

Effects of amorphous Si capping layer on sputtered BaSi2 film properties

Conference paper (2018)

Authors

Yilei Tian Photovoltaic Materials and Devices

A.R. Montes Photovoltaic Materials and Devices

Olindo Isabella Photovoltaic Materials and Devices

M. Zeman Electrical Sustainable Energy

Department

Electrical Sustainable Energy

DOI: https://doi.org/10.1109/ASDAM.2018.8544670

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Published Date

2018

Language

English

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Department

Electrical Sustainable Energy

Abstract

Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.

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