Effects of amorphous Si capping layer on sputtered BaSi2 film properties
Yilei Tian (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Ana Montes (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Miro Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
Regarded as a promising absorber material for solar cell applications, Barium disilicide (BaSi2) is still confronted with issues related to surface oxidation. Here, we use a-Si.H deposited by plasma-enhanced chemical vapor deposition as capping layer to prevent surface oxidation of sputtered BaSi2 films. Based on crystalline quality and optical properties characterizations, thin a-Si.H capping cannot sufficiently prevent surface oxidation. Conversely, oxidation of a-Si.H layer in turn promotes Ba diffusion and Si isolation. Applying a thicker a-Si.H capping layer (more than 20 nm) can suppress such effect. The multi-materials capping layer can also be regarded as potential strategy to prevent surface oxidation of BaSi2.