Microwave-induced resistance oscillations in a back-gated GaAs quantum well

Journal Article (2017)
Author(s)

X. Fu (University of Minnesota)

Q. A. Ebner (University of Minnesota Twin Cities)

Q. Shi (University of Minnesota)

M. A. Zudov (University of Minnesota Twin Cities)

Qinglin Qian (Purdue University)

J.D. Watson (Kavli institute of nanoscience Delft, TU Delft - QRD/Kouwenhoven Lab, Purdue University, TU Delft - QuTech Advanced Research Centre)

Michael J. Manfra (Purdue University)

Research Group
FTQC/Bertels Lab
Copyright
© 2017 X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, J.D. Watson, M. J. Manfra
DOI related publication
https://doi.org/10.1103/PhysRevB.95.235415
More Info
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Publication Year
2017
Language
English
Copyright
© 2017 X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, J.D. Watson, M. J. Manfra
Research Group
FTQC/Bertels Lab
Issue number
23
Volume number
95
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Abstract

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov-de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

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