Anomalous nematic states, recently discovered in ultraclean two-dimensional electron gas, emerge from quantum Hall stripe phases upon further cooling. These states are hallmarked by a local minimum (maximum) in the hard (easy) longitudinal resistance and by an incipient plateau in the Hall resistance in nearly half-filled Landau levels. Here, we demonstrate that a modest in-plane magnetic field, applied either along (110) or (11¯0) crystal axis of GaAs, destroys anomalous nematic states and restores quantum Hall stripe phases aligned along their native (110) direction. These findings confirm that anomalous nematic states are distinct from other ground states and will assist future theories to identify their origin.

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Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.

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We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.@en

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov-de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.

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We investigate quantum Hall stripes under an in-plane magnetic field B in a variable-density two-dimensional electron gas. At filling factor ν=9/2, we observe one, two, and zero Binduced reorientations at low, intermediate, and high densities, respectively. The appearance of these distinct regimes is due to a strong density dependence of the Binduced orienting mechanism which triggers the second reorientation, rendering stripes parallel to B. In contrast, the mechanism which reorients stripes perpendicular to B showed no noticeable dependence on density. Measurements at ν=9/2 and 11/2 at the same, tilted magnetic field allow us to rule out the density dependence of the native symmetry-breaking field as a dominant factor. Our findings further suggest that screening might play an important role in determining stripe orientation, providing guidance in developing theories aimed at identifying and describing native and B induced symmetry-breaking fields.@en