Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10000-25000 cm2 V-1 s-1 consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings.@en

We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov-de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.@en

We investigate quantum Hall stripes under an in-plane magnetic field B in a variable-density two-dimensional electron gas. At filling factor ν=9/2, we observe one, two, and zero Binduced reorientations at low, intermediate, and high densities, respectively. The appearance of these distinct regimes is due to a strong density dependence of the Binduced orienting mechanism which triggers the second reorientation, rendering stripes parallel to B. In contrast, the mechanism which reorients stripes perpendicular to B showed no noticeable dependence on density. Measurements at ν=9/2 and 11/2 at the same, tilted magnetic field allow us to rule out the density dependence of the native symmetry-breaking field as a dominant factor. Our findings further suggest that screening might play an important role in determining stripe orientation, providing guidance in developing theories aimed at identifying and describing native and B induced symmetry-breaking fields.@en

Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits, which can be measured by single electrons tunneling through zero-energy modes. The development of such a readout requires resolving the coherent charge tunneling amplitude from a quantum dot in a Majorana-zero-mode host system faithfully on short time scales. Here, we demonstrate rapid single-shot detection of a coherent single-electron tunneling amplitude between InAs nanowire quantum dots. We realize a sensitive dispersive detection circuit by connecting a sub-GHz, lumped-element microwave resonator to a high-lever arm gate on one of the dots. The resulting large dot-resonator coupling leads to an observed dispersive shift that is of the order of the resonator linewidth at charge degeneracy. This shift enables us to differentiate between Coulomb blockade and resonance - corresponding to the scenarios expected for qubit-state readout - with a signal-to-noise ratio exceeding 2 for an integration time of 1μs. Our result paves the way for single-shot measurements of fermion parity on microsecond time scales in topological qubits.@en

Parity control of superconducting islands hosting Majorana zero modes (MZMs) is required to operate topological qubits made from proximitized semiconductor nanowires. We test this control by studying parity effects in hybrid InAs-Al single-Cooper-pair transistors (SCPTs) to evaluate the feasibility of this material system. In particular, we investigate the gate-charge modulation of the supercurrent and observe a consistent 2e-periodic pattern indicating a general lack of low-energy subgap states in these nanowires at zero magnetic field. In a parallel magnetic field, an even-odd pattern develops with a gate-charge spacing that oscillates as a function of field demonstrating that the modulation pattern is sensitive to the presence of a single bound state. In addition, we find that the parity lifetime of the SCPT decreases exponentially with magnetic field as the bound state approaches zero energy. Our work shows that aluminum is the preferred superconductor for future topological qubit experiments and highlights the important role that quasiparticle traps and superconducting gap engineering would play in these qubits. Moreover, we demonstrate a means by which bound states can be detected in devices with superconducting leads.@en

We report direct detection of charge tunneling between a quantum dot and a superconducting island through radio-frequency gate sensing. We are able to resolve spin-dependent quasiparticle tunneling as well as two-particle tunneling involving Cooper pairs. The quantum dot can act as an RF-only sensor to characterize the superconductor addition spectrum, enabling us to access subgap states without transport. Our results provide guidance for future dispersive parity measurements of Majorana modes, which can be realized by detecting the parity-dependent tunneling between dots and islands.@en

Low-temperature illumination of a two-dimensional electron gas in GaAs quantum wells is known to greatly improve the quality of high-field magnetotransport. The improvement is known to occur even when the carrier density and mobility remain unchanged, but what exactly causes it remains unclear. Here, we investigate the effect of illumination on microwave photoresistance in low magnetic fields. We find that the amplitude of microwave-induced resistance oscillations grows dramatically after illumination. Dingle analysis reveals that this growth reflects a substantial increase in the single-particle (quantum) lifetime, which likely originates from the light-induced redistribution of charge enhancing the screening capability of the doping layers.@en

We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.@en

Anomalous nematic states, recently discovered in ultraclean two-dimensional electron gas, emerge from quantum Hall stripe phases upon further cooling. These states are hallmarked by a local minimum (maximum) in the hard (easy) longitudinal resistance and by an incipient plateau in the Hall resistance in nearly half-filled Landau levels. Here, we demonstrate that a modest in-plane magnetic field, applied either along (110) or (11¯0) crystal axis of GaAs, destroys anomalous nematic states and restores quantum Hall stripe phases aligned along their native (110) direction. These findings confirm that anomalous nematic states are distinct from other ground states and will assist future theories to identify their origin. @en