Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10000-25000 cm² V^-1 s^-1 consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings.

Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits, which can be measured by single electrons tunneling through zero-energy modes. The development of such a readout requires resolving the coherent charge tunneling amplitude from a quantum dot in a Majorana-zero-mode host system faithfully on short time scales. Here, we demonstrate rapid single-shot detection of a coherent single-electron tunneling amplitude between InAs nanowire quantum dots. We realize a sensitive dispersive detection circuit by connecting a sub-GHz, lumped-element microwave resonator to a high-lever arm gate on one of the dots. The resulting large dot-resonator coupling leads to an observed dispersive shift that is of the order of the resonator linewidth at charge degeneracy. This shift enables us to differentiate between Coulomb blockade and resonance - corresponding to the scenarios expected for qubit-state readout - with a signal-to-noise ratio exceeding 2 for an integration time of 1μs. Our result paves the way for single-shot measurements of fermion parity on microsecond time scales in topological qubits.