Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing
Journal Article
(2004)
Author(s)
FC Voogt (External organisation)
Ryoichi Ishihara (TU Delft - Electronic Components, Technology and Materials)
F. D. Tichelaar (TU Delft - QN/High Resolution Electron Microscopy)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://resolver.tudelft.nl/uuid:9866d717-3521-4bc9-bac2-8423a964781d
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Publication Year
2004
Research Group
Electronic Components, Technology and Materials
Issue number
5
Volume number
95
Pages (from-to)
2873-2879
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