Non-conducting interfaces of LaAlO3/SrTiO3 produced in sputter deposition: The role of stoichiometry

Journal Article (2013)
Author(s)

IM Dildar (External organisation)

DB Boltje (External organisation)

MHS Hesselerth (External organisation)

J. Aarts (External organisation)

Qiang Xu (QN/High Resolution Electron Microscopy)

H. W. Zandbergen (QN/High Resolution Electron Microscopy)

DOI related publication
https://doi.org/10.1063/1.4798828
More Info
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Publication Year
2013
Language
English
Issue number
121601
Volume number
102
Pages (from-to)
1-4

Abstract

We have investigated the properties of interfaces between LaAlO3 films grown on SrTiO3 substrates singly terminated by TiO2. We used RF sputtering in a high-pressure oxygen atmosphere. The films are smooth, with flat surfaces. Transmission electron microscopy shows sharp and continuous interfaces with some slight intermixing. The elemental ratio of La to Al, measured by the energy dispersive X-ray technique, is found to be 1.07. Importantly, we find these interfaces to be non-conducting, indicating that the sputtered interface is not electronically reconstructed in the way reported for films grown by pulsed laser deposition because of the different interplays among stoichiometry, mixing, and oxygen vacancies.

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