Advanced light management techniques for two-terminal hybrid tandem solar cells

Journal Article (2018)
Author(s)

A.J. Blanker (TU Delft - Electrical Engineering, Mathematics and Computer Science)

P. Berendsen (TU Delft - Electrical Engineering, Mathematics and Computer Science)

N. Phung (External organisation)

Z.E.A.P. Vroon (TNO)

M. Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)

A.H.M. Smets (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Photovoltaic Materials and Devices
DOI related publication
https://doi.org/10.1016/j.solmat.2018.02.017 Final published version
More Info
expand_more
Publication Year
2018
Language
English
Research Group
Photovoltaic Materials and Devices
Journal title
Solar Energy Materials and Solar Cells
Volume number
181
Pages (from-to)
77-82
Downloads counter
264
Collections
Institutional Repository
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

Multi-junction solar cells are considered for various applications, as they tackle various loss mechanisms for single junction solar cells. These losses include thermalization and non-absorption below the band gap. In this work, a tandem configuration comprising copper-indium-gallium-di-selenide (CIGS) and hydrogenated amorphous silicon (a-Si:H) absorber layers is studied. Two main challenges are addressed in this work. Firstly, the natural roughness of CIGS is unfavorable for monolithically growing a high quality a-Si:H top cell. Some sharp textures in the CIGS induce shunts in the a-Si:H top junction, limiting the electrical performance of such a configuration. To smoothen this interface, the possibility of mechanically polishing the intermediate i-ZnO layer has been explored. The second challenge that is addressed, is the significant current mismatch in these tandem architectures. To enhance absorption in the current-limiting top cell, the ZnO:Al front electrode was textured by means of wet-etching the entire tandem stack. We demonstrated that one can manipulate the morphology of the random textures by varying the growth conditions of the ZnO:Al, leading to better light management in these devices.