Reliability issues in RRAM ternary memories affected by variability and aging mechanisms

Conference Paper (2017)
Author(s)

A Rubio (Universitat Politecnica de Catalunya)

Manuel Escudero (Universitat Politecnica de Catalunya)

P. Pouyan (TU Delft - Computer Engineering)

Research Group
Computer Engineering
DOI related publication
https://doi.org/10.1109/IOLTS.2017.8046238
More Info
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Publication Year
2017
Language
English
Research Group
Computer Engineering
Pages (from-to)
90-92
ISBN (electronic)
978-1-5386-0352-9

Abstract

Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime.

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