A Monolithic GaN Active Gate Driver Achieving 71.6% Ringing Reduction Across Various Load Currents Using A Ringing Sensor and Simplified Digital Algorithm

Conference Paper (2026)
Author(s)

Wenjia Xu (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Huajun Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Hesheng Lin (TU Delft - Electrical Engineering, Mathematics and Computer Science)

G.Q. Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Qinwen Fan (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ISCAS66217.2026.11562056 Final published version
More Info
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Publication Year
2026
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
4400-4404
Publisher
IEEE
ISBN (print)
979-8-3315-7770-4
Event
2026 IEEE International Symposium on Circuits and Systems, ISCAS 2026 (2026-05-24 - 2026-05-27), Shanghai, China
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Abstract

The switching node ringing due to parasitic inductances and capacitances in power converters is a major source of electromagnetic interference (EMI) and reliability issues. This paper presents a closed-loop active gate driving scheme in a 400-V monolithic GaN buck converter, which consists of a 2-bit gate driver, a ringing sensor, and an adaptive controller, to reduce ringing without sacrificing power efficiency across various load currents. The 2-bit stop-and-go gate driver suppresses ringing using a pre-defined output current profile and an adaptive, fine-tuned timing determined by the adaptive controller. A ringing sensor monitors the ringing amplitude continuously. Based on the ringing sensor output, the controller uses a fast single variable algorithm to control the gate driver timing across various load currents. Implemented in a 650V monolithic GaN process, the buck converter with the proposed closed-loop adaptive gate driver achieves a ringing reduction of up to 71.6% with 1A to 5A varying load current, while consuming the same transition power loss compared to a benchmark fixed gate driver.

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