A Comparative Analysis of the Junction Formation Mechanisms of the Boron on Silicon Junction
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Abstract
Photodiodes based on the Boron on Silicon junction (B-Si) show excellent responsivity to DUV and VUV photons, radiation hardness, and impressive electrical characteristics. However, the proposed models describing the junction formation mechanism do not sufficiently predict the junction's properties. We analyze two previously proposed models: the ultra-shallow p-n junction model and the charge transfer heterojunction model. We additionally apply the Schottky-Mott theory, a semiconductor-metal heterojunction model. Both the commonalities and incompatibilities between these models are discussed.