PF
Piet Xiaowen Fang
Authored
3 records found
The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low-energy electrons (below 1 keV
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Metal-Semiconductor (M/S) heterojunctions, better known as Schottky junctions play a crucial role in modern electronics. At present, the mechanisms behind the M/S junctions are still a subject of discussion. In this work, we investigate the interfaces between semiconducting cryst
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The recently found crystalline silicon-amorphous boron (c-Si/a-B) heterojunction has been successfully applied in the detection of short-wave UV photons. These detectors play a decisive role in the progress of nanoelectronics fabrication. The c-Si/a-B heterojunction could not be
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