CMOS integrated circuits for the quantum information sciences
Jens Anders (University of Stuttgart)
Masoud Babaie (TU Delft - Electronics)
Imran Bashir (Equal 1. Labs, Fremont)
Edoardo Charbon (EPFL Neuchâtel)
Lotte Geck (Forschungszentrum Jülich, RWTH Aachen University)
Mohamed I. Ibrahim (Cornell University, Massachusetts Institute of Technology)
F Sebasatiano (TU Delft - Quantum Circuit Architectures and Technology)
R. B. Staszewski (Equal 1. Labs, Dublin, University College Dublin)
Andrei Vladimirescu (University of California)
G.B. More Authors (External organisation)
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Abstract
Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical integrated circuits can be used to complement quantum mechanical systems, enabling more compact, performant, and/or extensible systems than would be otherwise feasible. In this article - written by a consortium of early contributors to the field - we provide a review of some of the early integrated circuits for the quantum information sciences. Complementary metal - oxide semiconductor (CMOS) and bipolar CMOS (BiCMOS) integrated circuits for nuclear magnetic resonance, nitrogen-vacancy-based magnetometry, trapped-ion-based quantum computing, superconductor-based quantum computing, and quantum-dot-based quantum computing are described. In each case, the basic technological requirements are presented before describing proof-of-concept integrated circuits. We conclude by summarizing some of the many open research areas in the quantum information sciences for CMOS designers.
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