Profile Engineering of Decreasing Arsenic Doping in Silicon RPCVD

Conference paper (2006)

Authors

M Popadic Electronic Components, Technology and Materials - EEMCS
F Sarubbi Electronic Components, Technology and Materials - EEMCS
T.L.M. Scholtes Electronic Components, Technology and Materials - EEMCS
S. Milosavljevic Electronic Components, Technology and Materials - EEMCS
W.B. de Boer Electronic Components, Technology and Materials - EEMCS
L.K. Nanver Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
More Info
expand_more

Published Date

2006

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials