C-V profiling of ultra-shallow junctions using step-like background profiles

Deep p+ junctions formed by drive-in from pure boron depositions

Pure boron chemical vapor deposited layers; A new material for silicon device processing

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

high performance silicon based extreme ultraviolet radiation detector for industrial application

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Application of amorphous boron layer as diffusion barrier for pure aluminium

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

High-performance DUV/EUV photodiodes in a pure boron doping technology

A 67 dBm OIP multi-stacked junction varactor

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

RF/microwave device fabrication in silicon-on-glass technology

Response time of silicon photodiodes for DUV/EUV radiation