Deep p+ junctions formed by drive-in from pure boron depositions

C-V profiling of ultra-shallow junctions using step-like background profiles

Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications

Pure boron chemical vapor deposited layers; A new material for silicon device processing

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

Application of amorphous boron layer as diffusion barrier for pure aluminium

high performance silicon based extreme ultraviolet radiation detector for industrial application

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Special RF/microwave devices in silicon-on-glass technology

High-performance DUV/EUV photodiodes in a pure boron doping technology

A 67 dBm OIP multi-stacked junction varactor

Characterization of new EUV stable silicon photodiodes

Enabling low-distortion varactors for adaptive transmitters

Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes