Pure boron chemical vapor deposited layers; A new material for silicon device processing

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

C-V profiling of ultra-shallow junctions using step-like background profiles

Deep p+ junctions formed by drive-in from pure boron depositions

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Application of amorphous boron layer as diffusion barrier for pure aluminium

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

high performance silicon based extreme ultraviolet radiation detector for industrial application

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Response time of silicon photodiodes for DUV/EUV radiation

A 67 dBm OIP multi-stacked junction varactor

Response time of shallow junction silicon photodiodes

Characterization of new EUV stable silicon photodiodes

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

Enabling low-distortion varactors for adaptive transmitters