Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications

Deep p+ junctions formed by drive-in from pure boron depositions

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

C-V profiling of ultra-shallow junctions using step-like background profiles

Pure boron chemical vapor deposited layers; A new material for silicon device processing

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

Application of amorphous boron layer as diffusion barrier for pure aluminium

high performance silicon based extreme ultraviolet radiation detector for industrial application

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Response time of shallow junction silicon photodiodes

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

Special RF/microwave devices in silicon-on-glass technology

RF/microwave device fabrication in silicon-on-glass technology

Enabling low-distortion varactors for adaptive transmitters

A 67 dBm OIP multi-stacked junction varactor