C-V profiling of ultra-shallow junctions using step-like background profiles

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications

Deep p+ junctions formed by drive-in from pure boron depositions

Pure boron chemical vapor deposited layers; A new material for silicon device processing

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

high performance silicon based extreme ultraviolet radiation detector for industrial application

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Application of amorphous boron layer as diffusion barrier for pure aluminium

Response time of silicon photodiodes for DUV/EUV radiation

Special RF/microwave devices in silicon-on-glass technology

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/microwave technology

Response time of shallow junction silicon photodiodes

RF/microwave device fabrication in silicon-on-glass technology