F

F Sarubbi

34 records found

C-V profiling of ultra-shallow junctions using step-like background profiles

Deep p+ junctions formed by drive-in from pure boron depositions

Pure boron chemical vapor deposited layers; A new material for silicon device processing

Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications
Doctoral thesis (2010) - F Sarubbi (author)

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

Ultra linear low-loss varactor diode configurations for adaptive RF systems

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Application of amorphous boron layer as diffusion barrier for pure aluminium

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

high performance silicon based extreme ultraviolet radiation detector for industrial application

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

A 67 dBm OIP multi-stacked junction varactor

Enabling low-distortion varactors for adaptive transmitters

High-performance DUV/EUV photodiodes in a pure boron doping technology

Response time of shallow junction silicon photodiodes

Special RF/microwave devices in silicon-on-glass technology