Characterization of pure boron depositions integrated in silicon diodes for nanometer deep junction applications

Pure boron chemical vapor deposited layers; A new material for silicon device processing

C-V profiling of ultra-shallow junctions using step-like background profiles

Deep p+ junctions formed by drive-in from pure boron depositions

Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range

High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

high performance silicon based extreme ultraviolet radiation detector for industrial application

Application of amorphous boron layer as diffusion barrier for pure aluminium

Chemical vapor deposition of alpha-boron layers on silicon for controlled nanometer deep p+n junction formation

Ultra linear low-loss varactor diode configurations for adaptive RF systems

Controlled Growth of Non-uniform Arsenic Profiles in Silicon RPCVD Epitaxial Layers

C-V Profiling of Ultrashallow Junctions using a Step-Like Background Doping Profile

Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes

Improved RF devices for future adaptive wireless systems using two-sided contacting and AIN cooling

Enabling low-distortion varactors for adaptive transmitters

Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes

High-performance DUV/EUV photodiodes in a pure boron doping technology

Response time of shallow junction silicon photodiodes

Pure boron-doped photodiodes: a solution for radiation detection in EUV lithography

Characterization of new EUV stable silicon photodiodes