Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

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Integrated Waveguide Power Combiners with Artificial dielectrics for mm-Wave Systems

Conference Paper (2017)

Author(s)

Zhebin Hu (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Maria Alonso-delPino (TU Delft - Electrical Engineering, Mathematics and Computer Science, National Aeronautics and Space Administration, NASA)

Daniele Cavallo (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Harshitha Thippur Shivamurthy (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Marco Spirito (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group

Electronics

Silicon Power combiner Artificial dielectrics Waveguide Si BiCMOS Impedance Elemental semiconductors Dielectric materials Waveguides Prototypes Pins Probes Power combiners Power combiners BiCMOS integrated circuits Artificial dielectric BiCMOS technology implementation E field probes N:1 power combiner Back-end-of-line Back-to-back-combiner operation Capacitive resonance Frequency 240.0 GHz to 310.0 GHz Full wave EM simulations Full-wave electromagnetic simulations Input feeding Insertion losses Integrated waveguide power combiners Mm-wave systems Power combiner operation Signal summation Silicon technologies Single transverse plane Synthetic waveguides (sub)millimeter-wave Integrated circuit

DOI related publication

https://doi.org/10.1109/MWSYM.2017.8058652 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:a6ead3cf-73da-4da2-be6c-18626991c8e7

More Info

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Publication Year

2017

Language

English

Research Group

Electronics

Pages (from-to)

646-649

ISBN (electronic)

978-1-5090-6360-4

Event

IEEE MTT-S International Microwave Symposium, IMS 2017 (2017-06-04 - 2017-06-09), Hawaii Convention Center, Honolulu, HI, United States

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189

Abstract

In this contribution we present a new class of N:1 power combiner based on synthetic waveguides integrated in silicon technologies back-end-of-line. The input feeding is based on (N) E field probes employing capacitive resonance, feeding a waveguide with artificial dielectrics (ADs). The signal summation occurs on a single transverse plane, thus providing insertion losses which do not scale with the number of inputs. This results in a combiner more compact and without restriction in the number of inputs compared to the traditional power of two (2N) combiners. The power combiner operation is presented in a BiCMOS technology implementation and analyzed by means of full wave electromagnetic (EM) simulations. Finally, the experimental results of an integrated 4:1 back-to-back-combiner operating in the 240-310GHz band is presented and compared with the full EM model.