Performance of THz Components Based on Microstrip PECVD SiNx Technology

Journal Article (2017)
Author(s)

M. Finkel (TU Delft - QN/Klapwijk Lab, Moscow State Pedagogical University)

H. Thierschmann (TU Delft - QN/Klapwijk Lab)

L Galatro (TU Delft - Electronics)

A.J. Katan (TU Delft - QN/Afdelingsbureau)

DJ Thoen (TU Delft - QN/van der Zant Lab, TU Delft - Tera-Hertz Sensing)

PJ Visser (SRON–Netherlands Institute for Space Research)

Marco Spirito (TU Delft - Electronics)

Teun Klapwijk (Moscow State Pedagogical University, TU Delft - QN/Klapwijk Lab)

Research Group
QN/Klapwijk Lab
DOI related publication
https://doi.org/10.1109/TTHZ.2017.2759507
More Info
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Publication Year
2017
Language
English
Research Group
QN/Klapwijk Lab
Issue number
6
Volume number
7
Pages (from-to)
765-771

Abstract

We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiNx, which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiNx), we observe losses below 4 dB/mm. The thin SiNx dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.

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