Thin layers of black phosphorus present an ideal combination of a 2Dmaterial with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which involves water, oxygen and light. Wehave measured the spatial profile of the conductivity on flakes of black phosphorus as a function of time using scanning microwave impedance microscopy. Amicrowave excitation (3 GHz) allows to image a conducting sample even when covered with a dielectric layer. Weobserve that on bare black phosphorus, the conductivity changes drastically over the whole surface within a day. Wedemonstrate that the degradation process is slowed down considerably by covering the material with a 10 nmlayer of hafnium oxide. It is stable for more than a week, opening up a route towards stable black phosphorus devices in which the high dielectric constant of hafnium oxide can be exploited. Covering black phosphorus with a 15 nmboron nitride flake changes the degradation process qualitatively, it is dominated by the edges of the flake indicating a diffusive process and happens on the scale of days.@en

One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact in GaAs/AlGaAs heterostructures. Being formed with split gate technology, these structures represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel. It has been a long standing goal to achieve similar experimental conditions also in superconductors. Here we demonstrate the formation of a superconducting quantum point contact (SQPC) with split gate technology in a two-dimensional superconductor, utilizing the unique gate tunability of the superfluid at the LaAlO3/SrTiO3 interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: First, SQPC for which the supercurrent is carried only by a few quantum transport channels. Second, superconducting island strongly coupled to the equilibrium reservoirs. Third, charge island with a discrete spectrum weakly coupled to the reservoirs.@en

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.@en

We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiNx, which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiNx), we observe losses below 4 dB/mm. The thin SiNx dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.@en

We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiNx, which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiNx), we observe losses below 4 dB/mm. The thin SiNx dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.@en

A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.@en

A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.@en

This article reviews recent thermoelectric experiments on quantum dot (QD) systems. The experiments focus on two types of inter-dot coupling: tunnel coupling and Coulomb coupling. Tunnel-coupled QDs allow particles to be exchanged between the attached reservoirs via the QD system. Hence, an applied temperature bias results in a thermovoltage. When being investigated as a function of QD energies, this leads to the thermopower stability diagram. Here, largest thermovoltage is observed in the regions of the triple points. In a QD system which exhibits only capacitive inter-dot coupling, electron transfer is suppressed. Such a device is studied in a three-terminal geometry: while one QD connects to the heat reservoir, the other one can exchange electrons with two reservoirs at a lower temperature. When the symmetry of the tunneling coefficients in the cold system is broken, the device becomes an energy harvester: thermal energy is extracted from the heat reservoir and is converted into a directed charge current between the two cold reservoirs. This review illustrates the large potential of multi-QD devices for thermoelectrics and thermal management at the nanometer-scale. In this article, the authors review the thermoelectric properties of a coupled quantum dot system which can be viewed as an artificial molecule. The first part presents the measurement of the thermopower generated by such a system located between a hot and a cold reservoir. In the second part it is discussed how coupled quantum dots can be used to extract energy from the hot reservoir and convert it into a directed current without particle exchange.@en

This article reviews recent thermoelectric experiments on quantum dot (QD) systems. The experiments focus on two types of inter-dot coupling: tunnel coupling and Coulomb coupling. Tunnel-coupled QDs allow particles to be exchanged between the attached reservoirs via the QD system. Hence, an applied temperature bias results in a thermovoltage. When being investigated as a function of QD energies, this leads to the thermopower stability diagram. Here, largest thermovoltage is observed in the regions of the triple points. In a QD system which exhibits only capacitive inter-dot coupling, electron transfer is suppressed. Such a device is studied in a three-terminal geometry: while one QD connects to the heat reservoir, the other one can exchange electrons with two reservoirs at a lower temperature. When the symmetry of the tunneling coefficients in the cold system is broken, the device becomes an energy harvester: thermal energy is extracted from the heat reservoir and is converted into a directed charge current between the two cold reservoirs. This review illustrates the large potential of multi-QD devices for thermoelectrics and thermal management at the nanometer-scale. In this article, the authors review the thermoelectric properties of a coupled quantum dot system which can be viewed as an artificial molecule. The first part presents the measurement of the thermopower generated by such a system located between a hot and a cold reservoir. In the second part it is discussed how coupled quantum dots can be used to extract energy from the hot reservoir and convert it into a directed current without particle exchange.@en

We study the electrodynamic impedance of percolating conductors with a predefined network topology using a scanning microwave impedance microscope at gigahertz frequencies. For a given percolation number we observe strong spatial variations across a sample that correlate with the connected regions (clusters) in the network when the resistivity is low such as in aluminum. For the more-resistive material (Nb,Ti)N, the impedance becomes dominated by the local structure of the percolating network (connectivity). The results can be qualitatively understood and reproduced with a network current-spreading model based on the pseudoinverse Laplacian of the underlying network graph.@en

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), while the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.@en

We have realized a microstrip based terahertz (THz) near field cantilever that enables quantitative measurements of the impedance of the probe tip at THz frequencies (0.3 THz). A key feature is the on-chip balanced hybrid coupler that serves as an interferometer for passive signal cancellation to increase the readout circuit sensitivity despite extreme impedance mismatch at the tip. We observe distinct changes in the reflection coefficient of the tip when brought into contact with different dielectric (Si, SrTiO3) and metallic samples (Au). By comparing finite element simulations, we determine the sensitivity of our THz probe to be well below 0.25 fF. The cantilever further allows for topography imaging in a conventional atomic force microscope mode. Our THz cantilever removes several critical technology challenges and thus enables a shielded cantilever based THz near field microscope.@en

We experimentally study the free-space electromagnetic field emitted from a multimode rectangular waveguide equipped with a diagonal-horn antenna. Using the frequency range of 215-580 GHz, a photomixer is used to launch a free-space circularly polarized electromagnetic field, exciting multiple modes at the input of the rectangular waveguide via an input diagonal-horn antenna. A second photomixer is used, together with a silicon mirror Fresnel scatterer, to act as a polarization-sensitive coherent detector to characterize the emitted field. We find that the radiated field, excited by the fundamental waveguide mode, is characterized by a linear polarization. In addition, we find that the polarization of the radiated field rotates by 45 if selectively exciting higher-order modes in the waveguide. Despite the higher-order modes, the radiated field appears to maintain a predominant Gaussian beam character, since an unidirectional coupling to a detector was possible, whereas the unidirectionality is independent of the frequency. We discuss a possible application of this finding. @en

Entropy is a fundamental thermodynamic quantity indicative of the accessible degrees of freedom in a system. While it has been suggested that the entropy of a mesoscopic system can yield nontrivial information on emergence of exotic states, its measurement in such small electron-number system is a daunting task. Here we propose a method to extract the entropy of a Coulomb-blockaded mesoscopic system from transport measurements. We prove analytically and demonstrate numerically the applicability of the method to such a mesoscopic system of arbitrary spectrum and degeneracies. We then apply our procedure to measurements of thermoelectric response of a single quantum dot, and demonstrate how it can be used to deduce the entropy change across Coulomb-blockade valleys, resolving, along the way, a long-standing puzzle of the experimentally observed finite thermoelectric response at the apparent particle-hole symmetric point.@en

We study experimentally the transmission of an electromagnetic waveguide in the frequency range from 160 to 300 GHz. Photo-mixing is used to excite and detect the fundamental TE10 mode in a rectangular waveguide with two orders-of-magnitude lower impedance. The large impedance mismatch leads to a strong frequency dependence of the transmission, which we measure with a high-dynamic range of up to 80 dB and with high frequency-resolution. The modified transmission function is directly related to the information rate of the waveguide, which we estimate to be about 1 bit per photon. We suggest that the results are applicable to a Josephson junction employed as a single-photon source and coupled to a superconducting waveguide to achieve a simple on-demand narrow-bandwidth free-space number-state quantum channel.@en

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two-terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor, hence achieving huge amplification factors. Nonthermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.@en

Rectification of thermal fluctuations in mesoscopic conductors is the key idea behind recent attempts to build nanoscale thermoelectric energy harvesters to convert heat into useful electric power. So far, most concepts have made use of the Seebeck effect in a two-terminal geometry, where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working principle of a new kind of energy harvester, proposed recently, using two capacitively coupled quantum dots. We show that, due to the novel three-terminal design of our device, which spatially separates the heat reservoir from the conductor circuit, the directions of charge and heat flow become decoupled. This enables us to manipulate the direction of the generated charge current by means of external gate voltages while leaving the direction of heat flow unaffected. Our results pave the way for a new generation of multi-terminal nanoscale heat engines.@en

Rectification of thermal fluctuations in mesoscopic conductors is the key idea behind recent attempts to build nanoscale thermoelectric energy harvesters to convert heat into useful electric power. So far, most concepts have made use of the Seebeck effect in a two-terminal geometry, where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working principle of a new kind of energy harvester, proposed recently, using two capacitively coupled quantum dots. We show that, due to the novel three-terminal design of our device, which spatially separates the heat reservoir from the conductor circuit, the directions of charge and heat flow become decoupled. This enables us to manipulate the direction of the generated charge current by means of external gate voltages while leaving the direction of heat flow unaffected. Our results pave the way for a new generation of multi-terminal nanoscale heat engines.@en