Thermal gating of charge currents with Coulomb coupled quantum dots

Journal Article (2015)
Author(s)

Holger Thierschmann (TU Delft - QN/Klapwijk Lab, University of Würzburg)

F Arnold (University of Würzburg)

Marcel Mittermüller (University of Würzburg)

L Maier (University of Würzburg)

Christian Heyn (Universität Hamburg)

W Hansen (Universität Hamburg)

H Buhmann (University of Würzburg)

Laurens W. Molenkamp (University of Würzburg)

Research Group
QN/Klapwijk Lab
Copyright
© 2015 R. Thierschmann, F Arnold, Marcel Mittermüller, L Maier, Christian Heyn, W Hansen, H Buhmann, Laurens W. Molenkamp
DOI related publication
https://doi.org/10.1088/1367-2630/17/11/113003
More Info
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Publication Year
2015
Language
English
Copyright
© 2015 R. Thierschmann, F Arnold, Marcel Mittermüller, L Maier, Christian Heyn, W Hansen, H Buhmann, Laurens W. Molenkamp
Research Group
QN/Klapwijk Lab
Issue number
11
Volume number
17
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Abstract

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), while the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.