Test and Reliability of Emerging Non-Volatile Memories

Conference Paper (2017)
Author(s)

Said Hamdioui (TU Delft - Computer Engineering)

P. Pouyan (TU Delft - Computer Engineering)

Huawei Li (Chinese Academy of Sciences)

Ying Wang (Chinese Academy of Sciences)

Arijit Raychowdhur (Georgia Institute of Technology)

Insik Yoon (Georgia Institute of Technology)

Research Group
Computer Engineering
DOI related publication
https://doi.org/10.1109/ATS.2017.42
More Info
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Publication Year
2017
Language
English
Research Group
Computer Engineering
Pages (from-to)
170-178
ISBN (print)
978-1-5386-3516-2
ISBN (electronic)
978-1-5386-2437-1

Abstract

The search for alternative memory technologies has attracted significant attention toward emerging non-volatile memories. Among them, STT-MRAM, PCM, RRAM have shown promising characteristic to gain a position inside the memory hierarchy of computing platforms, and even enable new computing paradigms. However like any other emerging technology these devices are affected by concerns to be resolved before they could become a mainstream. This paper reviews the main reliability and testability challenges of aforementioned emerging non-volatile memories and highlights the main future considerations toward them.

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