Investigation on Short-Circuit Characteristics and Failure Modes of SiC Planar MOSFETs with Linear and Hexagonal Topologies

Journal Article (2025)
Author(s)

Huan Wu (Chongqing University)

Hou-Cai Luo (Chongqing University)

Jingping Zhang (Chongqing University)

Bo-Feng Zheng (Chongqing University)

Ruonan Wang (Chongqing University)

Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

Xianping Chen (Chongqing University)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/JESTPE.2025.3527366
More Info
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Publication Year
2025
Language
English
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en
Issue number
2
Volume number
13
Pages (from-to)
2138-2149
Reuse Rights

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Abstract

This article compares and evaluates the single pulse short-circuit robustness of silicon carbide (SiC) MOSFETs with linear and hexagonal cell topologies under different gate voltages, bus voltages, and case temperatures. The short-circuit failure mechanisms of the linear and hexagonal cell topologies are studied. A new switching model for gate failure and thermal runaway short-circuit failure modes is proposed and analyzed. The robustness performance of the linear and hexagonal cell topologies is compared and evaluated under the same short-circuit power for the first time, fully revealing the comprehensive impact mechanism of cell topologies on the short-circuit robustness for SiC MOSFETs.

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