Investigation on Short-Circuit Characteristics and Failure Modes of SiC Planar MOSFETs with Linear and Hexagonal Topologies
Huan Wu (Chongqing University)
Houcai Luo (Chongqing University)
Jingping Zhang (Chongqing University)
Bofeng Zheng (Chongqing University)
Ruonan Wang (Chongqing University)
G. Q. Zhang (TU Delft - Electronic Components, Technology and Materials)
Xianping Chen (Chongqing University)
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Abstract
This article compares and evaluates the single pulse short-circuit robustness of silicon carbide (SiC) MOSFETs with linear and hexagonal cell topologies under different gate voltages, bus voltages, and case temperatures. The short-circuit failure mechanisms of the linear and hexagonal cell topologies are studied. A new switching model for gate failure and thermal runaway short-circuit failure modes is proposed and analyzed. The robustness performance of the linear and hexagonal cell topologies is compared and evaluated under the same short-circuit power for the first time, fully revealing the comprehensive impact mechanism of cell topologies on the short-circuit robustness for SiC MOSFETs.