Investigation on Short-Circuit Characteristics and Failure Modes of SiC Planar MOSFETs with Linear and Hexagonal Topologies
Huan Wu (Chongqing University)
Hou-Cai Luo (Chongqing University)
Jingping Zhang (Chongqing University)
Bo-Feng Zheng (Chongqing University)
Ruonan Wang (Chongqing University)
Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
Xianping Chen (Chongqing University)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
This article compares and evaluates the single pulse short-circuit robustness of silicon carbide (SiC) MOSFETs with linear and hexagonal cell topologies under different gate voltages, bus voltages, and case temperatures. The short-circuit failure mechanisms of the linear and hexagonal cell topologies are studied. A new switching model for gate failure and thermal runaway short-circuit failure modes is proposed and analyzed. The robustness performance of the linear and hexagonal cell topologies is compared and evaluated under the same short-circuit power for the first time, fully revealing the comprehensive impact mechanism of cell topologies on the short-circuit robustness for SiC MOSFETs.