Erratum
Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)
Teng Zhan (Chinese Academy of Sciences)
Jianwen Sun (Tsinghua University)
Tao Feng (Chinese Academy of Sciences)
Yulong Zhang (Tsinghua University)
Binru Zhou (Chinese Academy of Sciences)
Banghong Zhang (Chinese Academy of Sciences)
Junxi Wang (Chinese Academy of Sciences)
Pasqualina M. Sarro (TU Delft - Electronic Components, Technology and Materials)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
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Abstract
The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to 1 V) before the current is fully turned on.’’ This change does not affect the main conclusions of the manuscript. The authors would like to apologize for any inconvenience caused. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.