Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′-MoS2

Journal article (2017)

Authors

N. Papadopoulos QN/Steele Lab - AS
G.A. Steele QN/Steele Lab - AS
H.S.J. van der Zant QN/van der Zant Lab - AS
Research Group
QN/Steele Lab (AS) (TU Delft)
Copyright: © 2017 N. Papadopoulos, G.A. Steele, H.S.J. van der Zant
DOI
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https://doi.org/10.1103/PhysRevB.96.235436
More Info
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Published Date

26-12-2017

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Steele Lab

Abstract

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.