Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′-MoS2
N. Papadopoulos (TU Delft - QN/Steele Lab)
GA Steele (TU Delft - QN/Steele Lab)
H.S.J. van der Zant (TU Delft - QN/van der Zant Lab)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.