Efros-Shklovskii variable range hopping and nonlinear transport in 1T/1T′-MoS2
N. Papadopoulos (TU Delft - QN/Steele Lab)
G. A. Steele (TU Delft - QN/Steele Lab)
H. S.J. Van Der Zant (TU Delft - QN/van der Zant Lab)
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Abstract
We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n-butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.