The influence of growth kinetics on the relaxation of epitaxially grown RPCVD Si1-xGex

Conference paper (1998)

Authors

K Grimm External organisation
C.C.G. Visser Electronic Components, Technology and Materials - EEMCS
L.K. Nanver Electronic Components, Technology and Materials - EEMCS
L Vescan External organisation
H Lüth External organisation
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

1998

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials