The influence of growth kinetics on the relaxation of epitaxially grown RPCVD Si1-xGex
Conference Paper
(1998)
Author(s)
K Grimm (External organisation)
CCG Visser (TU Delft - Electronic Components, Technology and Materials)
L. K. Nanver (TU Delft - Electronic Components, Technology and Materials)
L Vescan (External organisation)
H Lüth (External organisation)
Research Group
Electronic Components, Technology and Materials
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https://resolver.tudelft.nl/uuid:bbf4dd53-212f-4f06-80dc-f11ebe96bc52
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Publication Year
1998
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
195-199
ISBN (print)
90-73461-15-1
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