A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3s) from -15°C to 85°C
Teruki Someya (TU Delft - Electronic Instrumentation)
Vincent Van Hoek (Student TU Delft)
Jan Angevare (TU Delft - Electronic Instrumentation)
Sining Pan (TU Delft - Electronic Instrumentation)
Kofi Makinwa (TU Delft - Microelectronics)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
This paper presents a 210nW BJT-based temperature sensor that achieves an inaccuracy of ±0.15°C (3s) from -15°C to 85°C. A dual-mode front-end (FE), which combines a bias circuit and a BJT core, halves the power needed to generate well-defined CTAT (VBE) and PTAT (?VBE) voltages. The use of a tracking ?S ADC reduces FE signal swing and further reduces system power consumption. In a 180-nm BCD process, the prototype achieves a 15mK resolution in 50ms conversion time, translating into a state-of-the-art FoM of 2.3pJK2.