Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain
Alessandro Buzzi (Massachusetts Institute of Technology)
Camille Papon (Massachusetts Institute of Technology)
M. Pirro (TU Delft - Electronic Components, Technology and Materials, Kavli institute of nanoscience Delft, TU Delft - Quantum & Computer Engineering)
O.H. Hooybergs (Massachusetts Institute of Technology, TU Delft - Quantum Circuit Architectures and Technology)
Hamza Raniwala (Massachusetts Institute of Technology)
Valeria Saggio (Massachusetts Institute of Technology)
C. Errando Herranz (TU Delft - Quantum Circuit Architectures and Technology, TU Delft - Quantum & Computer Engineering, Kavli institute of nanoscience Delft, TU Delft - QID/Herranz Lab)
Dirk Englund (Massachusetts Institute of Technology)
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Abstract
The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter's optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform.