The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter's optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform.

We demonstrate controllable and reversible spectral tuning of a single quantum emitter in a silicon photonic integrated circuit, achieving up to 400 pm shift at telecom wavelength, paving the way for monolithically integrated quantum technologies.

Color centers in silicon are leading qubits for scalable quantum information processing. We will discuss recent developments towards a technological platform including the formation of waveguide-integrated color centers, their spectral control, and on-chip single-photon detection.

Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world’s most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.

We show enhanced single-photon emission from artificial atoms in silicon by coupling them to cavities with high quality factors and small mode volumes, thus enabling enhanced light-matter interactions which are crucial for quantum technologies.