The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter's optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform.

Color centers in silicon are leading qubits for scalable quantum information processing. We will discuss recent developments towards a technological platform including the formation of waveguide-integrated color centers, their spectral control, and on-chip single-photon detection.

We demonstrate controllable and reversible spectral tuning of a single quantum emitter in a silicon photonic integrated circuit, achieving up to 400 pm shift at telecom wavelength, paving the way for monolithically integrated quantum technologies.