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Laser-Induced Creation of Coherent V2 Centers in Bulk-Grown Silicon Carbide

Journal Article (2026)
Author(s)

Laurens J. Feije (TU Delft - QuTech Advanced Research Centre, TU Delft - QID/Taminiau Lab, Kavli institute of nanoscience Delft)

Gerben M. Timmer (Kavli institute of nanoscience Delft, TU Delft - QID/Taminiau Lab, TU Delft - QuTech Advanced Research Centre)

Rana Karababa (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

Guido L. van de Stolpe (TU Delft - QID/Taminiau Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

Tobias Martens (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QID/Taminiau Lab)

Sjoerd J.H. Loenen (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - BUS/Quantum Delft)

Theo B.A. Durant (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - Communications ESA)

Antariksha Das (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QID/Taminiau Lab)

Tim H. Taminiau (Kavli institute of nanoscience Delft, TU Delft - Quantum Internet Division, TU Delft - QuTech Advanced Research Centre)

More Authors (External organisation)

Research Institute
QuTech Advanced Research Centre
DOI related publication
https://doi.org/10.1021/acs.nanolett.6c01807 Final published version
More Info
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Publication Year
2026
Language
English
Research Institute
QuTech Advanced Research Centre
Journal title
Nano Letters
Issue number
28
Volume number
26
Pages (from-to)
9143-9150
Downloads counter
18
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Abstract

Solid-state spin defects are promising qubits for quantum network nodes. A key challenge toward larger networks is creating defects with high yield into nanophotonic devices while maintaining good optical and spin properties. Here, we demonstrate the creation of single V2 centers in nanopillars fabricated from commercial bulk-grown 4H-silicon carbide using a pulsed above-bandgap (UV) laser. We observe an 11-fold increase in the V2 center occurrence after UV laser illumination. These laser-induced V2 centers exhibit narrow optical line widths and spectral diffusion rates comparable to naturally occurring V2 centers in nanopillars of the same material. Furthermore, we measure a spin coherence time of (Formula presented) under dynamical decoupling, consistent with dephasing by the nuclear-spin bath. This demonstration of the in situ, postfabrication generation of coherent V2 centers in nanostructures in widely available bulk-grown 4H-SiC shows the potential for above-bandgap laser illumination for scalable defect creation in integrated photonic devices.