BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

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BiCMOS integrated waveguide power combiner at submillimeter-wave frequencies

Conference Paper (2015)

Author(s)

M. Alonso Del Pino (TU Delft - Electrical Engineering, Mathematics and Computer Science)

D Cavallo (TU Delft - Electrical Engineering, Mathematics and Computer Science)

H. Thippur Shivamurthy (TU Delft - Electrical Engineering, Mathematics and Computer Science)

H Gao (TU Delft - Electrical Engineering, Mathematics and Computer Science)

M Spirito (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group

Tera-Hertz Sensing

Silicon germanium Permittivity Metals Dielectrics Pins Power combiners BiCMOS integrated circuits

DOI related publication

https://doi.org/10.1109/IRMMW-THz.2015.7327937 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:cbc29a94-10a7-42cd-9d39-c23f1245afeb

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Publication Year

2015

Language

English

Research Group

Tera-Hertz Sensing

Pages (from-to)

1-2

Publisher

IEEE

ISBN (print)

978-1-4799-8272-1

Event

IRMMW-THz 2015, Hong Kong, China (2015-08-23 - 2015-08-28)

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Abstract

This contribution presents the development of an integrated power combiner in Bi-CMOS technology employing artificial dielectric layers (ADLs) at submillimeter wave frequencies. The power is gathered from frequency multiplier chains into a single waveguide which is loaded with ADL in order to reduce the structure footprint.