Weak localization in boron nitride encapsulated bilayer MoS2

Journal article (2019)

Authors

N. Papadopoulos Kavli institute of nanoscience Delft, QN/Steele Lab - AS
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi National Institute for Materials Science
H.S.J. van der Zant QN/van der Zant Lab - AS , Kavli institute of nanoscience Delft
G.A. Steele Kavli institute of nanoscience Delft, QN/Steele Lab - AS
Research Group
QN/Steele Lab (AS) (TU Delft)
Copyright: © 2019 N. Papadopoulos, Kenji Watanabe, Takashi Taniguchi, H.S.J. van der Zant, G.A. Steele
DOI
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https://doi.org/10.1103/PhysRevB.99.115414
Spin-orbit coupling Encapsulation Magnetotransport Weak locatization
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Published Date

2019

Language

English

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Steele Lab

Abstract

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to nonencapsulated MoS2. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.