Optimization methods for 3D lithography process utilizing DMD-based maskless grayscale photolithography system

Conference Paper (2015)
Authors

X Ma (Kyoto University)

Y Kato (Kyoto University)

Y Hirai (Kyoto University)

F.C.M. van Kempen (TU Delft - Computational Design and Mechanics)

A. Keulen (TU Delft - Computational Design and Mechanics)

T Tsuchiya (Kyoto University)

O Tabata (Kyoto University)

Research Group
Computational Design and Mechanics
Copyright
© 2015 X Ma, Y Kato, Y Hirai, F.C.M. van Kempen, A. van Keulen, T Tsuchiya, O Tabata
To reference this document use:
https://doi.org/10.1117/12.2084486
More Info
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Publication Year
2015
Language
English
Copyright
© 2015 X Ma, Y Kato, Y Hirai, F.C.M. van Kempen, A. van Keulen, T Tsuchiya, O Tabata
Research Group
Computational Design and Mechanics
Volume number
9426
Pages (from-to)
1-10
ISBN (print)
978-1-628415285
DOI:
https://doi.org/10.1117/12.2084486
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

Digital Micromirror Device (DMD)-based grayscale lithography is a promising tool for three dimensional (3D) microstructuring of thick-film photoresist since it is a maskless process, provides possibility for the free-form of 3D microstructures, and therefore rapid and cost-effective microfabrication. However, process parameter determination lacks efficient optimization tool, and thus conventional look-up table (indicating the relationship between development depth and exposure dose value under a fixed development time) approach with manual try-and-error adjustment is still gold standard. In this paper, we firstly present a complete “input target-output parameters” single exposure optimization method for 3D microstructuring utilizing DMD-based grayscale lithography. This numerical optimization based on lithography simulation and sensitivity analysis can automatically optimize a combination of three process parameters for target microstructure; exposure dose pattern, a focal position, and development time. Through a series of experiments using a 20 μm thick positive photoresist, validity of the proposed optimization approach has been successfully verified. Secondly, with the purpose of further advancing accuracy and improve the uniformity of precision for the target area, a multiple exposure optimization method is proposed. The simulated results proved that the multiple exposure optimization method is a promising strategy to further improve precision for thicker photoresist structure.

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