Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

Journal article (2011)

Authors

A. Sakic Electronic Components, Technology and Materials - EEMCS
T.L.M. Scholtes Electronic Components, Technology and Materials - EEMCS
W.B. de Boer Old - EWI Sect. ECTM , Electronic Components, Technology and Materials - EEMCS
N. Golshani Electronic Components, Technology and Materials - EEMCS
J Derakhshandeh External organisation
L.K. Nanver Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
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Published Date

2011

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials