Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
Journal Article
(2011)
Author(s)
A Sakic (TU Delft - Electronic Components, Technology and Materials)
TLM Scholtes (TU Delft - Electronic Components, Technology and Materials)
Wiebe de Boer (TU Delft - Old - EWI Sect. ECTM, TU Delft - Electronic Components, Technology and Materials)
Negin Golshani (TU Delft - Electronic Components, Technology and Materials)
J Derakhshandeh (External organisation)
Lis Nanver (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
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https://resolver.tudelft.nl/uuid:da56d6b8-e800-43d3-a007-728470c9b69e
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Publication Year
2011
Language
English
Research Group
Electronic Components, Technology and Materials
Issue number
12
Volume number
4
Pages (from-to)
2092-2107
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