Modeling electrical resistivity of naturally aged Al–Mg–Si Alloys
Abbas Bahrami (Isfahan University of Technology)
Maryam Mehr (TU Delft - Electronic Components, Technology and Materials)
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Abstract
Isothermal ageing of Al–Mg–Si alloys, stored at room temperature for more than 5 months, is associated with an unexpected significant increase in the overall electrical resistivity. This unexpected anomalous increase is not observed in alloys with shorter storage (natural ageing) times. This phenomenon is explained with a scenario, based on the evolution of the size distribution of Guinier–Preston (GP) zones during natural ageing and during subsequent artificial ageing. The proposed scenario can explain the contribution of natural ageing atomic clusters to this anomalous increase in the electrical resistivity. A physically based combined precipitation–electrical resistivity model, with the former being based on simultaneous nucleation-growth-coarsening reactions and the latter based on the Bragg scattering of electrons from atomic clusters, has been used to explain the electrical resistivity evolution. It is shown that the proposed model is capable of reproducing the experimental data in both short natural ageing (less than 5 months) and long natural ageing (more than 5 months) regimes.
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