Vertically-oriented MoS2 nanosheets for nonlinear optical devices
M. Bolhuis (Kavli institute of nanoscience Delft, TU Delft - QN/Conesa-Boj Lab)
J. Hernandez Rueda (Kavli institute of nanoscience Delft, TU Delft - QN/Kuipers Lab)
S. E. Van Heijst (Kavli institute of nanoscience Delft)
M. Tinoco Rivas (TU Delft - QN/Conesa-Boj Lab, Kavli institute of nanoscience Delft)
L. Kuipers (Kavli institute of nanoscience Delft, TU Delft - QN/Quantum Nanoscience)
Sonia Conesa Conesa-Boj (Kavli institute of nanoscience Delft, TU Delft - QN/Conesa-Boj Lab)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
Transition metal dichalcogenides such as MoS2 represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS2 (v-MoS2) nanosheets could be advantageous as compared to conventional horizontal MoS2 (h-MoS2) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS2 limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS2 nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS2 nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices.
help_outline