Genetic Algorithm–Assisted Design of Redistribution Layer Vias for a Fan-Out Panel-Level SiC MOSFET Power Module Packaging

Conference Paper (2022)
Author(s)

Jiajie Fan (Fudan University, Research Institute of Fudan University, Ningbo)

Yichen Qian (Hohai University)

Wei Chen (Fudan University)

Jing Jiang (Fudan University)

Zhuorui Tang (Fudan University)

Xue-Jun Fan (Lamar University)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

Research Group
Electronic Components, Technology and Materials
Copyright
© 2022 Jiajie Fan, Yichen Qian, Wei Chen, Jing Jiang, Zhuorui Tang, Xuejun Fan, Kouchi Zhang
DOI related publication
https://doi.org/10.1109/ECTC51906.2022.00049
More Info
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Publication Year
2022
Language
English
Copyright
© 2022 Jiajie Fan, Yichen Qian, Wei Chen, Jing Jiang, Zhuorui Tang, Xuejun Fan, Kouchi Zhang
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en
Pages (from-to)
260-265
ISBN (print)
978-1-6654-7944-8
ISBN (electronic)
978-1-6654-7943-1
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

A fan-out panel-level packaging (FOPLP) with an embedded redistribution layer (RDL) via interconnection reduces the size, thermal resistance, and parasitic inductance of power module packaging. In this study, the effect of the RDL via size on the reliability of a FOPLP SiC MOSFET power module was investigated. To improve the thermal management and thermal cycling reliability of the designed SiC module, genetic algorithm (GA)–assisted optimization methods were proposed to optimize the RDL via size. First, the heat dissipation and the plastic work density of the SiC MOSFET module with various via diameters and depths were simulated using finite element simulations. Next, both the ant colony optimization-backpropagation neural network (ACOBPNN) with finite element simulation and the nondominated sorting genetic algorithm (NSGA-II) with theoretical model were developed to optimize the RDL via size. The results revealed that: (1) smaller via depth and size reduce the heat dissipation and thermal cycling reliability of the RDL via; (2) through both the ACO-BPNN and NSGA-II, the same optimal heat dissipation and plastic work density can be achieved in the designed module. (3) ACO-BPNN with assist of finite element simulation can provide a more effective optimization in complex packaging structure.

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