The influence of growth kinetics on the relaxation of epitaxially grown RPCVD SI1-x GEx
Conference Paper
(1999)
Author(s)
K Grimm (External organisation)
CCG Visser (TU Delft - Electronic Components, Technology and Materials)
L. K. Nanver (TU Delft - Electronic Components, Technology and Materials)
L Vescan (External organisation)
H Lüth (External organisation)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://resolver.tudelft.nl/uuid:e7ecb128-5ba9-422d-8b5d-75c569309bc5
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Publication Year
1999
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
25-32
ISBN (print)
0-87339-444-5
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