Single-crystelline hexagonal silicon-germanium

Journal article (2017)

Authors

HIT Hauge Eindhoven University of Technology
T Hauge Eindhoven University of Technology
S. Conesa Boj QN/Conesa-Boj Lab - AS , Eindhoven University of Technology
M. A. Verheijen Philips Innovation Labs, Eindhoven University of Technology
S Kölling Eindhoven University of Technology
E.P.A.M. Bakkers QN/Bakkers Lab
Research Group
QN/Conesa-Boj Lab (AS) (TU Delft)
Kinetics Growth rate Core/shell nanowire Hexagonal crystral structure Silicon-germanium Single-crystalline
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Published Date

2017

Language

English

Reuse Rights

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Conesa-Boj Lab

Abstract

Group IV materials with the hexagonal diamond crystal structure have been predicted to exhibit promising optical and electronic properties. In particular, hexagonal silicon–germanium (Si1–xGex) should be characterized by a tunable direct band gap with implications ranging from Si-based light-emitting diodes to lasers and quantum dots for single photon emitters. Here we demonstrate the feasibility of high-quality defect-free and wafer-scale hexagonal Si1–xGex growth with precise control of the alloy composition and layer thickness. This is achieved by transferring the hexagonal phase from a GaP/Si core/shell nanowire template, the same method successfully employed by us to realize hexagonal Si. We determine the optimal growth conditions in order to achieve single-crystalline layer-by-layer Si1–xGex growth in the preferred stoichiometry region. Our results pave the way for exploiting the novel properties of hexagonal Si1–xGex alloys in technological applications.