Investigation of "fur-like" residues post dry etching of polyimide using aluminum hard etch mask

Journal Article (2018)
Author(s)

Shivani Joshi (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Angel Savov (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Salman Shafqat (Eindhoven University of Technology)

Ronald Dekker (Philips Research, TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.mssp.2017.11.025 Final published version
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Publication Year
2018
Language
English
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
Accepted author manuscript
Journal title
Materials Science in Semiconductor Processing
Volume number
75
Pages (from-to)
130-135
Downloads counter
381
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Abstract

The authors found that oxygen plasma etching of polyimide (PI) with aluminum (Al) as a hard-etch mask results in lightly textured arbitrary shaped “fur-like” residues. Upon investigation, the presence of Al was detected in these residues. Ruling out several causes of metal contamination that were already reported in literature, a new theory for the presence of the metal containing residues is described. Furthermore, different methods for the residue free etching of PI using an Al hard-etch by using different metal deposition and patterning methods are explored. A fur-free procedure for the etching of PI using a one step-reactive ion etch of the metal hard-etch mask is presented.

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