Recent advances in MEMS technology have brought forward a new class of high-density stretchable/flexible electronics as well as large displacement MEMS devices. The in-situ electro-mechanical characterization of such devices is challenging since it requires: (i) highly delicate sample handling, (ii) controlled application of large (hundreds of µm) multi-axial displacements to mimic service conditions, (iii) integrated electrical testing and (iv) fast actuation for cyclic testing. Techniques already developed for small-scale testing in literature fall short to meet the combined set of requirements. To this end, a characterization methodology that fulfills all these requirements is developed and presented here. The technique is based on a piezo-driven micro-tensile stage, which provides large multi-axial displacements with high resolution and fast actuation (4000 µm/s). This is combined with a method for sample microfabrication on a test-chip to warrant delicate sample handling. Proof-of-principle experiments are shown for multi-axial mechanical characterization, electrical characterization and high cycle fatigue testing of micron-sized highly stretchable interconnects. Experiments are conducted under in-situ microscopic observation using optical microscopy, scanning electron microscopy, and high-resolution profilometry. The generic platform proposed here can be used for other problems where similar requirements are faced, e.g. other miniaturized, large displacement electro-mechanical applications that are currently being developed.@en

The authors found that oxygen plasma etching of polyimide (PI) with aluminum (Al) as a hard-etch mask results in lightly textured arbitrary shaped “fur-like” residues. Upon investigation, the presence of Al was detected in these residues. Ruling out several causes of metal contamination that were already reported in literature, a new theory for the presence of the metal containing residues is described. Furthermore, different methods for the residue free etching of PI using an Al hard-etch by using different metal deposition and patterning methods are explored. A fur-free procedure for the etching of PI using a one step-reactive ion etch of the metal hard-etch mask is presented.@en

A device for studying the mechanical and electrical behavior of free-standing micro-fabricated metal structures, subjected to a very large deformation, is presented in this paper. The free-standing structures are intended to serve as interconnects in high-density, highly stretchable electronic circuits. For an easy, damage-free handling and mounting of these free-standing structures, the device is designed to be fabricated as a single chip/unit that is separated into two independently movable parts after it is fixed in the tensile test stage. Furthermore, the fabrication method allows for test structures of different geometries to be easily fabricated on the same substrate. The utility of the device has been demonstrated by stretching the free-standing interconnect structures in excess of 1000% while simultaneously measuring their electrical resistance. Important design considerations and encountered processing challenges and their solutions are discussed in this paper.@en

The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

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