Advanced Characterization Approaches with Pad-Model De-Embedding of sub-THz Devices for 6G Applications
Aniello Franzese (RWTH Aachen University, IHP–Leibniz-Institut für innovative Mikroelektronik)
Batuhan Sutbas (IHP–Leibniz-Institut für innovative Mikroelektronik)
Thomas Mausolf (IHP–Leibniz-Institut für innovative Mikroelektronik)
Nicolò Moroni (IHP–Leibniz-Institut für innovative Mikroelektronik)
Renato Negra (RWTH Aachen University)
Alfredo Sánchez Ramos (University of Guadalajara)
Francesco Greco (University of Calabria)
Luigi Boccia (University of Calabria)
Ehsan Shokrolahzade (TU Delft - Electronics)
Marco Spirito (TU Delft - Electronics)
Corrado Carta (Technical University of Berlin, IHP–Leibniz-Institut für innovative Mikroelektronik)
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Abstract
This work describes accurate methods for the characterization of sub-terahertz (sub-THz) devices and pad de-embedding procedures. The extraction of the intrinsic DUT is enabled by generating a precise pad model using two-tier calibration approaches. Moreover, the proposed approaches offer a solution to the designers to preserve precious silicon area by presenting a simplified and potentially parameterizable pad model. Employing two different thru-reflect-line (TRL) calibration kits (calKits) together with the DUT on the same die, this research validates the proposed calibration strategies. This paper uses as DUT at J-band, i.e. a Marchand balun, fabricated using IHP SiGe BiCMOS technology with an aluminum back-end-of-line (BEOL), alongside the mentioned calKits. The goal of the paper is to assess the performance of the DUT and validate two de-embedding methods. Moreover, the pad model offers a way for accurate DUT characterization saving silicon area for future optimized designs.