A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Conference Paper (2021)
Author(s)

Guangyao Yu (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Mohamad Ghaffarian Niasar (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Dhanashree Ganeshpure (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Thiago Batista Soeiro (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Pavol Bauer (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
DC systems, Energy conversion & Storage
DOI related publication
https://doi.org/10.1109/PEMC48073.2021.9432530 Final published version
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Publication Year
2021
Language
English
Research Group
DC systems, Energy conversion & Storage
Bibliographical Note
Accepted author manuscript
Article number
9432530
Pages (from-to)
39-45
ISBN (print)
978-1-7281-5661-3
ISBN (electronic)
978-1-7281-5660-6
Event
2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)<br/> (2021-04-25 - 2021-04-29), The Silesian University of Technology, Online Conference/Gliwice, Poland
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Abstract

SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

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