A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Conference Paper (2021)
Author(s)

Guangyao Yu (TU Delft - DC systems, Energy conversion & Storage)

Mohamad Ghaffarian Niasar (TU Delft - DC systems, Energy conversion & Storage)

Dhanashree Ganeshpure (TU Delft - DC systems, Energy conversion & Storage)

Thiago Batista Soeiro (TU Delft - DC systems, Energy conversion & Storage)

Pavol Bauer (TU Delft - DC systems, Energy conversion & Storage)

Research Group
DC systems, Energy conversion & Storage
DOI related publication
https://doi.org/10.1109/PEMC48073.2021.9432530
More Info
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Publication Year
2021
Language
English
Research Group
DC systems, Energy conversion & Storage
Bibliographical Note
Accepted author manuscript
Pages (from-to)
39-45
ISBN (print)
978-1-7281-5661-3
ISBN (electronic)
978-1-7281-5660-6
Reuse Rights

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Abstract

SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

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