A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Conference Paper (2021)
Author(s)

G. Yu (TU Delft - DC systems, Energy conversion & Storage)

M. Ghaffarian Niasar (TU Delft - DC systems, Energy conversion & Storage)

Dhanashree Ganeshpure (TU Delft - DC systems, Energy conversion & Storage)

Thiago Soeiro (TU Delft - DC systems, Energy conversion & Storage)

P. Bauer (TU Delft - DC systems, Energy conversion & Storage)

Research Group
DC systems, Energy conversion & Storage
Copyright
© 2021 G. Yu, M. Ghaffarian Niasar, D.A. Ganeshpure, Thiago B. Soeiro, P. Bauer
DOI related publication
https://doi.org/10.1109/PEMC48073.2021.9432530
More Info
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Publication Year
2021
Language
English
Copyright
© 2021 G. Yu, M. Ghaffarian Niasar, D.A. Ganeshpure, Thiago B. Soeiro, P. Bauer
Research Group
DC systems, Energy conversion & Storage
Bibliographical Note
Accepted author manuscript@en
Pages (from-to)
39-45
ISBN (print)
978-1-7281-5661-3
ISBN (electronic)
978-1-7281-5660-6
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Abstract

SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

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