A Transformer Isolated Driving Method for SiC MOSFETs with a Constant Negative Off Voltage

Conference paper (2021)

Authors

G. Yu DC systems, Energy conversion & Storage
M. Ghaffarian Ghaffarian Niasar DC systems, Energy conversion & Storage
Dhanashree Ganeshpure DC systems, Energy conversion & Storage
Thiago Batista Soeiro DC systems, Energy conversion & Storage
Pavol Bauer DC systems, Energy conversion & Storage
Research Group
DC systems, Energy conversion & Storage
Copyright: © 2021 G. Yu, M. Ghaffarian Niasar, D.A. Ganeshpure, Thiago B. Soeiro, P. Bauer
DOI: https://doi.org/10.1109/PEMC48073.2021.9432530
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Published Date

2021

Language

English

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Research Group

DC systems, Energy conversion & Storage

Abstract

SiC MOSFETs have become more and more popular in recent years. Apart from its superior performance, attentions should be paid to its driving method. In this paper, an improved transformer driving circuit is proposed which can provide an almost constant negative turn-off voltage within a wide dutycycle range. Both simulation and experimental results are given to verify the effectiveness of this method.

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