Tunneling spectroscopy of localized states of WS2 barriers in vertical van der Waals heterostructures
Nikos Papadopoulos (Kavli institute of nanoscience Delft, TU Delft - QRD/Goswami Lab)
P. Gehring (TU Delft - QN/van der Zant Lab, Kavli institute of nanoscience Delft)
Kenji Watanabe (National Institute for Materials Science)
Takashi Taniguchi (National Institute for Materials Science)
Herre S J van der Zant (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)
Gary Alexander Steele (TU Delft - QN/Steele Lab, Kavli institute of nanoscience Delft)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here we study localized states in WS2 and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/ WS2/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.