Microstructure analysis of n-doped ¿c-SiOx:H reflector layers and their implementation in stable a-Si:H p-i-n junctions
Conference Paper
(2012)
Author(s)
P Babal (TU Delft - Photovoltaic Materials and Devices)
J Blanker (External organisation)
Ravi Vasudevan (TU Delft - Photovoltaic Materials and Devices)
A.H.M. Smets (TU Delft - Photovoltaic Materials and Devices)
Miroslav Zeman (TU Delft - Photovoltaic Materials and Devices)
Research Group
Photovoltaic Materials and Devices
DOI related publication
https://doi.org/10.1109/PVSC.2012.6317627
To reference this document use:
https://resolver.tudelft.nl/uuid:fd9a6759-745c-4aaf-903f-d6ff64c1a06f
More Info
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Publication Year
2012
Language
English
Research Group
Photovoltaic Materials and Devices
Pages (from-to)
321-326
ISBN (print)
978-1-4673-0066-7/12
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