Design, Fabrication, and Characterization of a 4H-SiC CMOS Readout Circuit for Monolithic Integration with SiC Sensors

Conference paper (2023)

Authors

R. Sattari Electronic Components, Technology and Materials - EEMCS
H.W. van Zeijl Electronic Components, Technology and Materials - EEMCS
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
Copyright: © 2023 R. Sattari, H.W. van Zeijl, Kouchi Zhang
DOI: https://doi.org/10.23919/EMPC55870.2023.10418435
Monolithic integration Ability SiC technology Readout circuit Off-chip component Fully differential Common-mode rejection Signal-to-noise ratio (SNR)
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

This paper reports the design and fabrication of a 4H-SiC CMOS readout circuit enabling monolithic integration of silicon carbide (SiC) sensors and circuits. Compared to conventional Si electronics, 4H-SiC integrated circuits can sustain operation in harsh conditions such as higher temperatures and radiation levels. The proposed amplifier performance is well balanced through the temperature range of 25 °C to 400 °C. Compared to state-of-the-art, the proposed SiC readout circuit does not include any off-chip components. The amplifier is fully differential, and hence shows improved common-mode rejection and signal-to-noise ratio (SNR). It can be monolithically integrated with SiC sensors in a scalable SiC technology.