Potential of semiconductor nanowires for single photon sources

Potential of semiconductor nanowires for single photon sources

Harmand, J.C.
Liu, L.
Patriarche, G.
Tchernycheva, M.
Akopian, N.
Perinetti, U.
Zwiller, V.

Applied Sciences

Kavli Institute of Nanoscience

2009-01-26

The catalyst-assisted growth of semiconductor nanowires heterostructures offers a very flexible way to design and fabricate single photon emitters. The nanowires can be positioned by organizing the catalyst prior to growth. Single quantum dots can be formed in the core of single nanowires which can then be easily isolated and addressed to generate single photons. Diameter and height of the dots can be controlled and their emission wavelength can be tuned at the optical telecommunication wavelengths by the material composition. The final morphology of a wire can be shaped by the radial/axial growth ratio, offering the possibility to form single mode optical waveguides with a tapered end for efficient photon collection.

semiconductor nanowires
quantum dots
single photon source
photonic wire

http://resolver.tudelft.nl/uuid:40b0381f-684a-4a3a-ac3e-02de9aa99990

SPIE

0277-786X

Proceedings of SPIE, 2009 vol. 7222

Institutional Repository

conference paper

(c)2009 Harmand, J.-C., Liu, L., Patriarche, G., Tchernycheva, M., Akopian, N., Perinetti, U., Zwiller, V.