Print Email Facebook Twitter Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface Title Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface Author RinconVieiraLugarinhoMonteiro, A.M. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft) Groenendijk, D.J. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft) Manca, N. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft) Mulazimoglu, E. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft) Goswami, S. (TU Delft QRD/Kouwenhoven Lab; Kavli institute of nanoscience Delft) Blanter, Y.M. (TU Delft QN/Blanter Group; Kavli institute of nanoscience Delft) Vandersypen, L.M.K. (TU Delft QN/Vandersypen Lab; Kavli institute of nanoscience Delft) Caviglia, A. (TU Delft QN/Caviglia Lab; Kavli institute of nanoscience Delft) Date 2017-02-08 Abstract Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates. Subject field-effectJosephson junctionOxide heterostructuresside gatesSQUID To reference this document use: http://resolver.tudelft.nl/uuid:5e3c9b20-1958-4bbe-adfd-7bd870a34447 DOI https://doi.org/10.1021/acs.nanolett.6b03820 ISSN 1530-6984 Source Nano Letters: a journal dedicated to nanoscience and nanotechnology, 17 (2), 715-720 Part of collection Institutional Repository Document type journal article Rights © 2017 A.M. RinconVieiraLugarinhoMonteiro, D.J. Groenendijk, N. Manca, E. Mulazimoglu, S. Goswami, Y.M. Blanter, L.M.K. Vandersypen, A. Caviglia Files PDF acs.nanolett.6b03820.pdf 2.86 MB Close viewer /islandora/object/uuid:5e3c9b20-1958-4bbe-adfd-7bd870a34447/datastream/OBJ/view