Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET

Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET

Jiang, Jing (Fudan University)
Wang, S. (TU Delft Bio-Electronics; Southern University of Science and Technology)
Liu, X. (TU Delft Interactive Intelligence; Southern University of Science and Technology)
Liu, Jianhui (Sky Chip Interconnection Technology Co)
Li, Jun (Sky Chip Interconnection Technology Co)
Zhou, Dexiang (Sky Chip Interconnection Technology Co)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)
Ye, H. (TU Delft Electronic Components, Technology and Materials; Southern University of Science and Technology; Chongqing University)
Tan, C. (TU Delft Electronic Components, Technology and Materials; Chongqing University)

2022

High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer characteristics are significantly recovered by applying a low electric field with a long duration. When the electric field and stress time are up to a certain value, the threshold voltage almost approaches the limitation, which is less than that before irradiation. Meanwhile, the effect of temperature on the recovery of the irradiated devices is also demonstrated. The result indicates that a high temperature of 175 °C used for the irradiated devices’ annealing does not play a role in promoting the recovery of transfer characteristics. In addition, to obtain a deep-level understanding of threshold degradation, the first-principles calculations of three Si/SiO2 interfaces are performed. It is found that new electronic states can be clearly observed in the conduction bans and valence bands after the Si-H/-OH bonds are broken by electron irradiation. However, their distribution depends on the selection of the passivation scheme. Ultimately, it can be observed that the threshold voltage linearly decreases with the increase in interface charge density. These results can provide helpful guidance in the deep interpretation of threshold degradation and the recovery of the irradiated super-junction devices.

electron irradiation
transfer characteristics
degradation
Si/SiO2 interface
first-principles calculation
interface charge density
threshold variation

http://resolver.tudelft.nl/uuid:5e5022f8-2ee1-4803-9716-37d0ca5c399a

10.3390/ electronics11132076

2079-9292

Electronics (Switzerland), 11 (13)

Institutional Repository

journal article

© 2022 Jing Jiang, S. Wang, X. Liu, Jianhui Liu, Jun Li, Dexiang Zhou, Kouchi Zhang, H. Ye, C. Tan