Print Email Facebook Twitter Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interface Title Achieving 23.83% conversion efficiency in silicon heterojunction solar cell with ultra-thin MoOx hole collector layer via tailoring (i)a-Si:H/MoOx interface Author Cao, L. (TU Delft Photovoltaic Materials and Devices) Procel Moya, P.A. (TU Delft Photovoltaic Materials and Devices; Universidad San Francisco de Quito) Alcañiz Moya, A. (TU Delft Photovoltaic Materials and Devices) Yan, J. (TU Delft Photovoltaic Materials and Devices) Tichelaar, F.D. (TU Delft QN/Afdelingsbureau; Kavli institute of nanoscience Delft) Özkol, E. (TU Delft Photovoltaic Materials and Devices) Zhao, Y. (TU Delft Photovoltaic Materials and Devices) Han, C. (TU Delft Photovoltaic Materials and Devices) Yang, G. (TU Delft Photovoltaic Materials and Devices) Yao, Z. (TU Delft Photovoltaic Materials and Devices) Zeman, M. (TU Delft Electrical Sustainable Energy) Santbergen, R. (TU Delft Photovoltaic Materials and Devices) Mazzarella, L. (TU Delft Photovoltaic Materials and Devices) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Department Electrical Sustainable Energy Date 2022 Abstract Thin films of transition metal oxides such as molybdenum oxide (MoOx) are attractive for application in silicon heterojunction solar cells for their potential to yield large short-circuit current density. However, full control of electrical properties of thin MoOx layers must be mastered to obtain an efficient hole collector. Here, we show that the key to control the MoOx layer quality is the interface between the MoOx and the hydrogenated intrinsic amorphous silicon passivation layer underneath. By means of ab initio modelling, we demonstrate a dipole at such interface and study its minimization in terms of work function variation to enable high performance hole transport. We apply this knowledge to experimentally tailor the oxygen content in MoOx by plasma treatments (PTs). PTs act as a barrier to oxygen diffusion/reaction and result in optimal electrical properties of the MoOx hole collector. With this approach, we can thin down the MoOx thickness to 1.7 nm and demonstrate short-circuit current density well above 40 mA/cm2 and a champion device exhibiting 23.83% conversion efficiency. Subject dipolefundamental studyindustrial approachnumerical modellingplasma treatmentsilicon heterojunction solar cellstailoring MoOultra-thin MoO To reference this document use: http://resolver.tudelft.nl/uuid:6501e113-6e58-4e62-908a-d4abdde56576 DOI https://doi.org/10.1002/pip.3638 ISSN 1062-7995 Source Progress in Photovoltaics: research and applications, 31 (12), 1245-1254 Part of collection Institutional Repository Document type journal article Rights © 2022 L. Cao, P.A. Procel Moya, A. Alcañiz Moya, J. Yan, F.D. Tichelaar, E. Özkol, Y. Zhao, C. Han, G. Yang, Z. Yao, M. Zeman, R. Santbergen, L. Mazzarella, O. Isabella Files PDF Progress_in_Photovoltaics ... l_with.pdf 2.5 MB Close viewer /islandora/object/uuid:6501e113-6e58-4e62-908a-d4abdde56576/datastream/OBJ/view